PART |
Description |
Maker |
1SMA4737 1SMA4739 1SMA4740 |
Discrete Devices -Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
UDZS7V5B |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
BZX79B75 BZX79B27 BZX79B2V4 BZX79B2V7 |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
BZV55B5V6 BZV55B56 BZV55B51 BZV55B5V1 BZV55B68 BZV |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
S1GM |
Discrete Devices -Diode-Standard Rectifier
|
Taiwan Semiconductor
|
UGF1004G UGF1005G UGF1006G UGF1007G |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
ESH2BA |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
DMF05LCFLP-7 DMF05LCFLP |
Discrete - Protection Devices - Zener TVSs FIVE ELEMENT COMMON ANODE ESD-PROTECTION DIODE ARRAY
|
Diodes Incorporated
|
ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package 45V 18A Schottky Discrete Diode in a D2-Pak package 40V 18A Schottky Discrete Diode in a D2-Pak package 35V 18A Schottky Discrete Diode in a D2-Pak package 35V 18A Schottky Discrete Diode in a TO-220AC package SCHOTTKY RECTIFIER CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode 40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier] Vishay Semiconductors
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|